A method to determine the small-signal equivalent circuit of FETs is proposed. This method
consists of a direct determination of both the extrinsic and intrinsic small-signal parameters …

Histological and anatomopathological studies performed on 152 independent
myeloblastosis-associated virus type 1 (MAV1)-induced nephroblastomas allowed us to …

This paper proposes the implementation of a dopant segregated band-edge silicide using
implantation-to-silicide and low temperature activation (500degC). The integration of …

This paper presents the high frequency performance of single-walled carbon nanotube
(SWNT) field-effect transistors, with channel consisting of dense networks of high purity …

Flexible electronics mostly relies on organic semiconductors but the limited carrier velocity in
polymers and molecular films prevents their use at frequencies above a few megahertz …

A method for measuring the noise parameters of MESFETs and HEMTs is presented. It is
based on the fact that three independent noise parameters are sufficient to fully describe the …

We investigate the high frequency performances of flexible field-effect transistors based on
carbon nanotubes. A large density of mostly aligned carbon nanotubes deposited on a …

High frequency capabilities of carbon nanotube field-effect transistors (CNTFETs) are
investigated. Structures with a large number of single-walled carbon nanotubes were …

Parameters limiting the improvement of high frequency characteristics for deep submicron
MOSFETs with the downscaling process of the channel gate length are analyzed …

The small‐signal equivalent circuit modeling of microwave field‐effect transistors (FETs) is
an evergreen and ever flourishing research field that has to be up‐to‐date with …